Evaluation of SiC JFETs for a Three-Phase Current-Source Rectifier with High Switching Frequency

This paper presents the switching characterization of 1200 V, 5 A SiC JFET prototype devices for application in an AC three-phase current-source rectifier (CSR) with a switching frequency of 150 kHz. The result of device on-resistance is shown as a function of junction temperature. Using a simplified gate drive design, the switching characteristics of the SiC JFET are measured experimentally at voltage levels up to 600 V, current up to 5 A, junction temperature up to 200 °C, and varying gate resistance. From these measurements, the switching times and energies are calculated and plotted for various conditions. Finally, the application of the SiC JFET in the CSR is discussed, and conduction and switching losses are calculated. Results show that the SiC JFET provides low switching loss, even at high switching frequencies.