CMOS integrated MEMS resonator for RF applications

Author

Uranga, A. ; Teva, J. ; Verd, J. ; López, J.L. ; Torres, F. ; Abadal, G. ; Barniol, N. ; Esteve, J. ; Pérez-Murano, F.

Author_Institution

Dept. of Electron. Eng., Univ. Autonoma de Barcelona

fYear

2006

fDate

21-24 May 2006

Abstract

The development of a novel fully integrated microelectromechanical system (MEMS) for RF purposes is presented. It is composed of a paddle polysilicon micro-resonator electrostatically excited and a transimpedance CMOS read-out amplifier. The micro-resonator is fabricated directly on a commercial CMOS technology, only requiring a wet etching process for the release of the resonant structure after the full CMOS integration. Electrical characterization of the on-chip resonant device has been performed using the implemented read-out amplifier, showing a resonance frequency near 100 MHz with bias polarization voltages smaller than 3 V

Keywords

CMOS integrated circuits; VHF amplifiers; etching; micromechanical resonators; CMOS integration; CMOS readout amplifier; MEMS resonator; RF applications; bias polarization voltages; electrical characterization; microelectromechanical system; on-chip resonant device; paddle polysilicon microresonator; resonance frequency; resonant structure; transimpedance amplifier; wet etching; CMOS process; CMOS technology; Microelectromechanical systems; Micromechanical devices; Polarization; Radio frequency; Radiofrequency amplifiers; Resonance; Resonant frequency; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1693081

Filename

1693081