DocumentCode
2541586
Title
Super Barrier Rectifier - A New Generation of Power Diode
Author
Rodov, V. ; Ankoudinov, A.L. ; Taufik
Author_Institution
APD Semiconductor Inc., 1 Lagoon Drive, Suite 410, Redwood City, CA 94065 USA
fYear
2007
fDate
Feb. 25 2007-March 1 2007
Firstpage
1053
Lastpage
1056
Abstract
The main principle behind the new Super Barrier Rectifier (SBR) approach is to create the "Super" barrier for majority carriers without unreliable metal-semiconductor Schottky contact. SBR technology creates such barrier in the MOS channel. The height of this barrier can be easily adjusted by the doping concentration in the channel. This paper demonstrates that the new power diodes combine high performance and high reliability for low voltage applications (below 100V). The underlying concepts and analysis of operation are presented as well as the lab test results that compare performance and reliability between Schottky and the new SBR diode.
Keywords
Leakage current; Low voltage; Power generation; Rectifiers; Schottky barriers; Schottky diodes; Semiconductor diodes; Surges; Temperature; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference, APEC 2007 - Twenty Second Annual IEEE
Conference_Location
Anaheim, CA, USA
ISSN
1048-2334
Print_ISBN
1-4244-0713-3
Type
conf
DOI
10.1109/APEX.2007.357645
Filename
4195848
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