Small-astigmatism, low-noise and high-power self-sustained pulsation MQW laser diodes with a real refractive index guided self-aligned structure

Author

Takayama, T. ; Imafuji, O. ; Hashimoto, T. ; Yuri, M. ; Yoshikawa, A. ; Itoh, K.

Author_Institution

Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

75

Abstract

We demonstrate for the first time low-noise (RIN<-130 dB/Hz) and high-power (>150 mW) self-sustained pulsation GaAlAs MQW laser diodes with small-astigmatism (<1 /spl mu/m) by using a real refractive index guided self-aligned structure with a single-quantum-well saturable absorber in the waveguide.

Keywords

III-V semiconductors; aberrations; aluminium compounds; gallium arsenide; laser noise; laser transitions; optical saturable absorption; quantum well lasers; refractive index; semiconductor device noise; waveguide lasers; 150 mW; 780 nm; GaAlAs; GaAlAs MQW laser diodes; high-power self-sustained pulsation MQW laser diodes; low-noise; real refractive index guided self-aligned structure; single-quantum-well saturable absorber; small-astigmatism; waveguide lasers; Absorption; Diode lasers; Optical noise; Optical refraction; Optical variables control; Optical waveguides; Power generation; Quantum well devices; Refractive index; Vision defects;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571556

Filename

571556