Photonic crystal heterostructures with controllable active layers

Author

Kononenko, Valerii K. ; Ushakov, Dmitrii V. ; Smirnov, Andrei G.

Author_Institution

Stepanov Inst. of Phys., Acad. of Sci., Minsk, Belarus

Volume

1

fYear

2003

fDate

29 June-3 July 2003

Firstpage

247

Abstract

Properties of one-dimensional photonic crystal heterostructures having a photonic band gap in the near infra-red spectrum are examined and photonic crystals with n-i-p-i superlattices are designed for information technologies. For the first time, the availability of n-i-p-i crystals in photonic band gap heterostructures is considered and different configurations of microcavities are described. Optical properties and output characteristics of the photonic crystals in the GaAs-AlGaAs and GaAs-GaInP systems are determined and possible applications for optical switchers, filters, single-mode laser sources, and amplifiers are discussed.

Keywords

laser modes; microcavity lasers; optical filters; optical switches; photonic band gap; photonic crystals; semiconductor lasers; semiconductor superlattices; GaAs-AlGaAs; GaAs-AlGaAs systems; GaAs-GaInP; GaAs-GaInP systems; controllable active layers; laser amplifiers; microcavities; n-i-p-i crystals; n-i-p-i superlattices; near infra-red spectrum; one-dimensional photonic crystal heterostructures; optical filters; optical switchers; photonic band gap; photonic band gap heterostructures; photonic crystal heterostructures; single-mode laser sources; Information technology; Infrared spectra; Microcavities; Optical control; Optical filters; Optical superlattices; Photonic band gap; Photonic crystals; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 2003. Proceedings of 2003 5th International Conference on

Print_ISBN

0-7803-7816-4

Type

conf

DOI

10.1109/ICTON.2003.1264625

Filename

1264625