DocumentCode
2543374
Title
Doping technology: An effective way to improve the performances of resistive switching memory
Author
Liu, Qi ; Liu, Ming ; Wang, Yan ; Lv, Hangbing ; Long, Shingbing ; Wang, Wei
Author_Institution
Lab. of Nano-Fabrication & Novel Devices Integrated Technol., Chinese Acad., Beijing, China
fYear
2011
fDate
9-10 June 2011
Firstpage
80
Lastpage
83
Abstract
Doping technology is an effective method for modulating and improving the RRAM´s performances. Generally, the doped BMO films exhibit much more preferred memory properties, including free-electroforming process, low operation voltage, good electrical uniformity and high device yield. In order to effectively improve the RRAM device performances by doping, more works need to do for understanding the physical mechanism and the inherent laws.
Keywords
doping; low-power electronics; random-access storage; thin films; RRAM; binary metal oxide; doped BMO films; doping technology; electrical uniformity; free-electroforming process; low operation voltage; memory properties; resistive switching memory; Copper; Doping; Films; Impurities; Ions; Performance evaluation; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-61284-131-1
Type
conf
DOI
10.1109/IWJT.2011.5970005
Filename
5970005
Link To Document