Dopant and carrier profiling for 3D-device architectures

In this paper, we discuss the metrology concepts that can be applied to characterize dopant/carrier profiles in FinFET-based structures. We demonstrate their value in a study of dose retention and activation when traditional ion implantation is used for junction formation at different tilt angles (45° and 10°). The high tilt angle is a simple approach to reach high sidewall doping and modest conformality. Although in practice this approach is of limited value, as shadowing caused on neighboring fins will limit applicability, it can serve as a reference for the more common approach based on a low tilt angle (<; 10°).