DocumentCode
2543589
Title
Characterization of dopant diffusion, mobility, activation and deactivation effects for n-type dopants with long-dwell laser spike annealing
Author
Chen, Shaoyin ; Wang, Yun ; Heidelberger, Christopher ; Thompson, Michael
Author_Institution
Ultratech Inc., San Jose, CA, USA
fYear
2011
fDate
9-10 June 2011
Firstpage
128
Lastpage
131
Abstract
N-type dopant activation by long dwell laser spike annealing, and subsequent deactivation during furnace annealing, has been studied using Hall measurements. Carrier activation is improved as the dwell time is increased from 10 to 20ms. For high concentration P junctions, deactivation is observed at temperatures as low as 400°C. However, activation can be fully recovered by a second LSA anneal suggesting that dopant-vacancy complexes formed during deactivation can be reversibly dissolved by LSA.
Keywords
Hall effect; diffusion; doping; furnaces; laser beam annealing; vacancies (crystal); Hall measurements; carrier activation; dopant diffusion; dopant-vacancy complexes; furnace annealing; long-dwell laser spike annealing; mobility; n-type dopant activation; subsequent deactivation; Annealing; Conferences; Furnaces; Junctions; Mathematical model; Semiconductor lasers; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2011 11th International Workshop on
Conference_Location
Kyoto
Print_ISBN
978-1-61284-131-1
Type
conf
DOI
10.1109/IWJT.2011.5970016
Filename
5970016
Link To Document