A universal common-source and common-drain model for 1-20GHz frequency range

Extraction plays an important role in the performance of device models especially in the high frequency regime. The present day extraction techniques mostly use a grounded source or common source (CS) device configuration. The models extracted from the grounded source devices are then used for devices in other configurations in a circuit application. This leads to discrepancies in accurate prediction of the circuit performance. This work investigates, the applicability of the models extracted using CS for other device configurations. It was shown with the help of measured data, in the frequency range of 1-20 GHz, that the models extracted from CS configuration do not predict the performance of a device in common drain (CD) configuration. Based on the above observation, a universal gate impedance model that works for both CS and CD configurations for BSIM3v3 was developed. The gate impedance model was then extended to BSIM4 for both CS and CD configurations. The models for BSIM3v3 and BSIM4 are verified using simulations and compared with the measured data