• DocumentCode
    2545051
  • Title

    Analog/RF circuit design techniques for nanometerscale IC technologies

  • Author

    Nauta, Bram ; Annema, Anne-Johan

  • Author_Institution
    Inst. of Res., Twente Univ., Enschede, Netherlands
  • fYear
    2005
  • fDate
    12-16 Sept. 2005
  • Firstpage
    45
  • Lastpage
    53
  • Abstract
    CMOS evolution introduces several problems in analog design. Gate-leakage mismatch exceeds conventional matching tolerances requiring active cancellation techniques or alternative architectures. One strategy to deal with the use of lower supply voltages is to operate critical parts at higher supply voltages, by exploiting combinations of thin- and thick-oxide transistors. Alternatively, low voltage circuit techniques are successfully developed. In order to benefit from nanometer scale CMOS technology, more functionality is shifted to the digital domain, including parts of the RF circuits. At the same time, analog control for digital and digital control for analog emerges to deal with current and upcoming imperfections.
  • Keywords
    CMOS analogue integrated circuits; integrated circuit design; low-power electronics; nanoelectronics; radiofrequency integrated circuits; RF circuit design; analog circuit design; analog design; gate-leakage mismatch; low voltage circuit techniques; nanometer scale CMOS technology; nanometerscale IC technology; thick-oxide transistors; thin-oxide transistor; Analog integrated circuits; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Circuit synthesis; Costs; Intelligent sensors; Radio frequency; Radiofrequency integrated circuits; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
  • Print_ISBN
    0-7803-9205-1
  • Type

    conf

  • DOI
    10.1109/ESSCIR.2005.1541556
  • Filename
    1541556