• DocumentCode
    2545067
  • Title

    Effect of hydrogen plasma passivation on the efficiency of polycrystalline silicon solar cells

  • Author

    Coppye, J. ; Szlufcik, J. ; Elgamel, H.E. ; Ghannam, M. ; De Schepper, P. ; Nijs, J. ; Mertens, R.

  • Author_Institution
    Interuniv. Micro-Electron. Center, Leuven, Belgium
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    873
  • Abstract
    The effect of front-side and back-side hydrogen plasma passivation on the efficiency of polycrystalline silicon solar cells is studied. Experiments are performed on clean room processed cells and on solar cells processed by screenprinting techniques. A study has been carried out by varying the temperature, power, time, and pressure of the process. Different plasma conditions have been optimized for solar cells with an oxide-passivated surface and cells with an oxide-free surface. In the case of screenprinted cells, plasma hydrogenation performed before metallization of the front contacts has been found to be more advantageous than plasma hydrogenation performed after front metallization
  • Keywords
    elemental semiconductors; hydrogen; passivation; silicon; solar cells; Si:H2 polycrystalline solar cells; back-side passivation; clean room processed cells; efficiency; front contacts; front-side passivation; metallization; oxide-free surface; oxide-passivated surface; power; pressure; screenprinted cells; temperature; time; Electrodes; Hydrogen; Passivation; Photovoltaic cells; Plasma applications; Plasma displays; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169334
  • Filename
    169334