DocumentCode
2545067
Title
Effect of hydrogen plasma passivation on the efficiency of polycrystalline silicon solar cells
Author
Coppye, J. ; Szlufcik, J. ; Elgamel, H.E. ; Ghannam, M. ; De Schepper, P. ; Nijs, J. ; Mertens, R.
Author_Institution
Interuniv. Micro-Electron. Center, Leuven, Belgium
fYear
1991
fDate
7-11 Oct 1991
Firstpage
873
Abstract
The effect of front-side and back-side hydrogen plasma passivation on the efficiency of polycrystalline silicon solar cells is studied. Experiments are performed on clean room processed cells and on solar cells processed by screenprinting techniques. A study has been carried out by varying the temperature, power, time, and pressure of the process. Different plasma conditions have been optimized for solar cells with an oxide-passivated surface and cells with an oxide-free surface. In the case of screenprinted cells, plasma hydrogenation performed before metallization of the front contacts has been found to be more advantageous than plasma hydrogenation performed after front metallization
Keywords
elemental semiconductors; hydrogen; passivation; silicon; solar cells; Si:H2 polycrystalline solar cells; back-side passivation; clean room processed cells; efficiency; front contacts; front-side passivation; metallization; oxide-free surface; oxide-passivated surface; power; pressure; screenprinted cells; temperature; time; Electrodes; Hydrogen; Passivation; Photovoltaic cells; Plasma applications; Plasma displays; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169334
Filename
169334
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