DocumentCode
2546088
Title
A cellular-band CDMA 0.25μm CMOS LNA linearized using active post-distortion
Author
Kim, Namsoo ; Aparin, Vladimir ; Barnett, Kenneth ; Persico, Charles
Author_Institution
Qualcomm, San Diego, CA, USA
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
227
Lastpage
230
Abstract
The theory of a linearization method using active post-distortion (APD) is explained. The method was used in a 0.25μm CMOS LNA, designed for cellular band CDMA applications. The LNA achieves 1.2dB NF, 16.2dB power gain, and +8dBm IIP3 while consuming 12mA current from 2.6V supply voltage. It shows 5.7dBm improvement in IIP3 performance with 0.15dB NF penalty in comparison with an LNA which does not use APD.
Keywords
CMOS analogue integrated circuits; cellular radio; code division multiple access; distortion; linearisation techniques; low noise amplifiers; 0.25 micron; 1.2 dB; 12 mA; 16.2 dB; 2.6 V; CMOS LNA circuit; IIP3 performance; active post-distortion; cellular band CDMA; linearization method; Current supplies; Energy consumption; Jamming; Linearity; Multiaccess communication; Noise measurement; Phase noise; Signal to noise ratio; Voltage; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541601
Filename
1541601
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