DocumentCode
2547184
Title
Parameter studies and analysis of high efficiency Cu(In,Ga)Se2 based solar cells
Author
Walter, T. ; Menner, Richard ; Ruckh, M. ; Schock, H.W.
Author_Institution
Inst. fuer Phys. Elektronik, Stuttgart Univ.
fYear
1991
fDate
7-11 Oct 1991
Firstpage
924
Abstract
Solar cells based on Cu(In,Ga)Se2 with gallium contents of 20% and 40% have been prepared and analyzed. Efficiencies exceeding 12% have been obtained. This contribution focuses on XRD, XPS and UPS analysis of these films. The influence of morphology, orientation of the grains, bulk composition, and secondary phases detected by surface analysis on the solar cell characteristics are presented and discussed. The existence of a metallic behavior on the Cu-rich side is shown and correlated to a shift in the Auger structure of Se and Cu. The possibility of passivating oxides is demonstrated
Keywords
X-ray diffraction examination of materials; X-ray photoelectron spectra; copper compounds; gallium compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; ultraviolet photoelectron spectra; Auger structure; CuIn1-xGaxSe2 solar cells; UPS; X-ray diffraction analysis; X-ray photoelectron spectra analysis; XPS; XRD; bulk composition; grain orientation; morphology; passivating oxides; secondary phases; semiconductor thin films; surface analysis; ultraviolet photoelectron spectroscopy; Energy measurement; Kinetic energy; Measurement standards; Morphology; Photovoltaic cells; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169344
Filename
169344
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