DocumentCode
2547720
Title
A 1 V, 26 μW extended temperature range band-gap reference in 130-nm CMOS technology
Author
Cabrini, A. ; De Sandre, G. ; Gobbi, L. ; Malcovati, P. ; Pasotti, M. ; Poles, M. ; Rigoni, F. ; Torelli, G.
Author_Institution
Dept. of Electron., Pavia Univ., Italy
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
503
Lastpage
506
Abstract
This paper presents a fully CMOS band-gap reference for extended temperature range (from -50 °C to 160 °C) applications. The proposed solution provides an output voltage of 798 mV with a power supply as low as 1 V. The measured output voltage variations as a function of temperature (-50 °C to 160 °C) and power supply (1 V to 2 V) are 6.64 ppm/°C and 248 ppm/V, respectively. High accuracy is achieved by minimizing the operational amplifier offset. Power consumption is approximately equal to 26 μW (supply voltage = 1 V). Silicon area is 0.02 mm2.
Keywords
CMOS integrated circuits; operational amplifiers; reference circuits; -50 to 160 C; 1 V; 130 nm; 26 muW; 798 mV; extended temperature range CMOS band-gap reference; operational amplifier; voltage reference circuit; CMOS technology; Circuits; Diodes; Operational amplifiers; Photonic band gap; Power measurement; Power supplies; Temperature dependence; Temperature distribution; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541670
Filename
1541670
Link To Document