• DocumentCode
    2549281
  • Title

    Electron emission from diamond layer on tungsten wire measured in cylindrical electrode configuration

  • Author

    Janik, J. ; Balon, F. ; Kromka, A. ; Dubravcova, V. ; Kadlecikova, M. ; Krepsova, P.

  • Author_Institution
    Dept. of Microelectron., Slovak Tech. Univ., Bratislava, Slovakia
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    79
  • Lastpage
    82
  • Abstract
    Negative electron affinity of diamond layers can successfully be used for field electron emission applications. There are many devices, where cold electron emission is needed For example, electron microscope, flat panel displays, cathodes of screens and others may employ the negative electron affinity of diamond. The aim of this work was to prepare diamond layers on wire substrates in order to provide field electron emission with great stability and low threshold voltage. The prepared diamond layers on tungsten wires showed such electron field emission properties. They provided a current density of J=0.4 mA/cm2 at 3 V/μm while the turn-on field was about 2 V/μm. The effective work function estimated from the Fowler-Nordheim plot of the I-V curve was Φ=0.05 eV. The surfaces of emitters have been investigated by micro-Raman spectroscopy and optical microscopy.
  • Keywords
    Raman spectra; current density; diamond; electron affinity; electron field emission; optical microscopy; tungsten; work function; C; Fowler-Nordheim plot; W; W wire substrates; cold electron emission; current density; cylindrical electrode configuration; diamond layer; effective work function; field electron emission; micro-Raman spectra; negative electron affinity; optical microscopy; threshold voltage; turn-on field; Cathodes; Electrodes; Electron emission; Electron microscopy; Flat panel displays; Optical microscopy; Stability; Threshold voltage; Tungsten; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088480
  • Filename
    1088480