Thermal resistance of the semiconductor structures for a photomixing device

Author

Darmo, J. ; Schafer, F. ; Förster, A. ; Kordo, P. ; Güsten, R.

Author_Institution

Max-Planck-Inst. fur Radioastronomie, Bonn, Germany

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

87

Lastpage

90

Abstract

The thermal resistance of layered semiconductor systems intended to be used for GaAs-based photomixing devices is studied. Layered systems with nonstoichiometric GaAs on the substrate exhibit an increase of thermal resistance of about 33%, while using a thin AlAs/GaAs multilayer structure leads to a thermal resistance only 10% larger than the thermal resistance of the GaAs substrate. The results are discussed with respect to the heat dissipation and implications for the photomixer device.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical frequency conversion; photoconducting devices; thermal resistance; AlAs-GaAs; AlAs/GaAs multilayer structure; GaAs; GaAs-based photomixing devices; heat dissipation; nonstoichiometric GaAs; photomixing device; semiconductor structures; thermal resistance; Electrical resistance measurement; Frequency conversion; Gallium arsenide; Laser tuning; Optical frequency conversion; Optical mixing; Silicon; Substrates; Thermal conductivity; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088482

Filename

1088482