DocumentCode
2549719
Title
Modeling of the inverse base width modulation effect in SiGe base HBT for circuit simulation
Author
Pesic, Tatjalia ; Jankovic, Nebojsa ; Karamarkovic, Jugoslav
Author_Institution
Dept. of Microelectron., Nis Univ., Serbia
fYear
2002
fDate
14-16 Oct. 2002
Firstpage
187
Lastpage
190
Abstract
We describe the method of including the inverse base width modulation (IBWM) effect in the non-quasi static SiGe base HBT circuit model. Simulated results reveal that the IBWM effect has strong influence on the HBT electrical characteristics and must be taken into account for accurate modeling of SiGe HBTs.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; HBT electrical characteristics; IBWM effect; SiGe; SiGe HBTs; SiGe base HBT; circuit simulation; inverse base width modulation effect; modeling; nonquasi static SiGe base HBT circuit model; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Inverse problems; Silicon germanium; Switches; Switching circuits; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN
0-7803-7276-X
Type
conf
DOI
10.1109/ASDAM.2002.1088503
Filename
1088503
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