DocumentCode
2549756
Title
Strain and composition in thin SiGe buffer layers with high Ge content studied by micro-Raman spectroscopy
Author
Perova, Tatiana S. ; Lyutovich, K. ; Potapova, D. ; Parry, C.P. ; Kasper, E. ; Moore, R.A.
Author_Institution
Dept. of Electron. & Electr. Eng., Dublin Univ., Ireland
fYear
2002
fDate
14-16 Oct. 2002
Firstpage
191
Lastpage
194
Abstract
Virtual substrates with high Ge content x of 0.25\n\n\t\t
Keywords
Ge-Si alloys; Raman spectra; internal stresses; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; stoichiometry; 100 nm; Ge content; MBE; SiGe; X-ray diffraction; composition; frequency methods; high Ge content; intensity methods; micro-Raman spectroscopy; nMOSFET structures; optimum process conditions; strain; strain relaxed SiGe buffers; thin SiGe buffer layers; virtual substrates; Buffer layers; Capacitive sensors; Germanium silicon alloys; Molecular beam epitaxial growth; Phonons; Power lasers; Silicon germanium; Spectroscopy; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN
0-7803-7276-X
Type
conf
DOI
10.1109/ASDAM.2002.1088504
Filename
1088504
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