MSM diodes based on an AlGaN/GaN HEMT layer structure for varactor and photodiode application

Author

Marso, M. ; Bernat, Jakub ; Wolter, M. ; Javorka, P. ; Fox, A. ; Kordos, P.

Author_Institution

Inst. of Thin Films & Interfaces, Res. Centre Julich, Germany

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

295

Lastpage

298

Abstract

The electrical and optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer system are investigated. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. The C_MAX/C_MIN ratio can be tuned by electrode geometry in contrast to conventional varactor diode concepts. Capacitance ratios up to 100 have been reached that exceed best values for published heterostructure varactor diodes. RF optimized devices with 0.5 μm electrode length exhibit cut-off frequencies up to 86 GHz. Optoelectronic measurements show the potential of the device as MSM photodetector.

Keywords

III-V semiconductors; aluminium compounds; capacitance; gallium compounds; high electron mobility transistors; metal-semiconductor-metal structures; microwave diodes; photodetectors; photodiodes; varactors; wide band gap semiconductors; 0.5 micron; 20 GHz; 86 GHz; AlGaN-GaN; AlGaN/GaN HEMT layer structure; IYEMT circuits; MSM diodes; MSM photodetector; RF optimized devices; capacitance ratios; cutoff frequencies; device fabrication; electrical properties; electrode geometry; optoelectronic properties; photodiode application; standard HEMT processing steps; varactor application; Aluminum gallium nitride; Circuits; Diodes; Electrodes; Etching; Gallium nitride; HEMTs; Optical device fabrication; Photodiodes; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088528

Filename

1088528