• DocumentCode
    2551485
  • Title

    A 68–83 GHz power amplifier in 90 nm CMOS

  • Author

    Lee, Jeffrey ; Chen, Chung-Chun ; Tsai, Jen-Han ; Lin, Kun-You ; Wang, Huei

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Firstpage
    437
  • Lastpage
    440
  • Abstract
    A balanced PA covering 68-83 GHz is developed in 90 nm CMOS. Using wideband power matching topology, the PA achieves power gain of greater than 18.1 dB from 68 to 83 GHz and gain flatness within 0.2 dB from 68 to 78 GHz. The PA has a maximum saturation output power of 14 dBm at 70 GHz, and greater than 11.8 dBm from 68 to 83 GHz. The best P1dB is 12 dBm at 68 GHz, and greater than 8.3 dBm from 68 to 83 GHz.
  • Keywords
    CMOS integrated circuits; field effect MIMIC; millimetre wave power amplifiers; CMOS; MMIC; frequency 68 GHz to 83 GHz; gain flatness; millimeter wave; power amplifier; power gain; size 90 nm; wideband power matching topology; CMOS technology; Circuits; Couplers; Millimeter wave technology; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Topology; Wideband; CMOS; MMIC; millimeter-wave (MMW); power amplifier (PA);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
  • Conference_Location
    Boston, MA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-2803-8
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2009.5165727
  • Filename
    5165727
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2551485