RF and noise properties of SOI MOSFETs, including the influence of a direct tunneling gate current

Author

Danneville, F. ; Pailloncy, G. ; Dambrine, G. ; Iñiguez, B.

Author_Institution

IEMN CNRS UMR, Villeneuve d´´Ascq, France

Volume

1

fYear

2004

fDate

3-5 Nov. 2004

Firstpage

103

Lastpage

110

Abstract

In this paper, we describe the small signal and noise properties of SOI MOSFETs. A first order discussion is carried out to discuss the parameters that strongly influence the cut-off frequencies (f_t, f_max) and the related noise performance in up-to-date SOI MOSFETs. Then a high frequency noise modeling is used to discuss the bias dependence of the gate and drain noise current and related key noise parameters as well as their upcoming variations along the gate length down-scaling. The capability of the noise modeling is then highlighted through comparisons with experimental data, and the influence of the parasitic capacitances (overlap, fringing) is discussed. Finally, special emphasis is made towards the influence of a direct tunneling current on the noise performance of SOI MOSFETs.

Keywords

MOSFET; semiconductor device models; semiconductor device noise; silicon-on-insulator; tunnelling; RF property; SOI MOSFET; cut-off frequencies; direct tunneling gate current; gate length down-scaling; noise current; noise modeling; noise properties; parasitic capacitances; CMOS technology; Circuits; Cutoff frequency; Degradation; Leakage current; MOSFETs; Parasitic capacitance; Performance analysis; Radio frequency; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on

Print_ISBN

0-7803-8777-5

Type

conf

DOI

10.1109/ICCDCS.2004.1393363

Filename

1393363