Proposal of an AlAs-oxide current confinement structure for GaInAs/AlGaInAs long wavelength surface emitting lasers

Author

Ohmoki, N. ; Hatori, N. ; Mizutani, A. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

205

Abstract

In this paper, we propose a novel long-wavelength VCSEL with an oxidized AlAs confinement structure which is grown on an InP substrate. We expect the proposed structure will provide a threshold reduction and a high temperature operation of long wavelength VCSELs. We present some characteristics of AlAs oxidation on InP substrates and demonstrate GaInAs-AlGaInAs edge emitting lasers (/spl Lambda/=1.65 /spl mu/m) with the AlAs-oxide current confinement for the first time.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; oxidation; quantum well lasers; semiconductor growth; substrates; surface emitting lasers; vapour phase epitaxial growth; 1.65 mum; AlAs oxidation; AlAs-oxide current confinement; AlAs-oxide current confinement structure; GaInAs-AlGaInAs; GaInAs-AlGaInAs edge emitting lasers; GaInAs/AlGaInAs long wavelength surface emitting lasers; InP; InP substrate; InP substrates; high temperature operation; long wavelength VCSELs; long-wavelength VCSEL; oxidized AlAs confinement structure; threshold reduction; Carrier confinement; Distributed Bragg reflectors; Electrons; Indium gallium arsenide; Oxidation; Proposals; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571624

Filename

571624