DocumentCode
2552904
Title
A new design for tapered-geometry high-power semiconductor optical sources
Author
Brooks, N.S. ; Sarma, J. ; Middlemast, I.
Author_Institution
Sch. of Electron. & Electr. Eng., Bath Univ., UK
Volume
2
fYear
1996
fDate
18-21 Nov 1996
Firstpage
207
Abstract
A compact model for tapered-geometry optical sources has been developed using perturbation analysis to evaluate carrier-induced changes to modal propagation constants. Results for novel, parabolically-tapered devices demonstrate their merit as high-power semiconductor laser sources
Keywords
laser theory; light sources; optical design techniques; perturbation theory; semiconductor device models; semiconductor lasers; waveguide lasers; carrier-induced changes; high-power semiconductor laser sources; modal propagation constants; parabolically-tapered devices; perturbation analysis; tapered-geometry high-power semiconductor laser optical source design model; Geometrical optics; Laser modes; Laser transitions; Optical amplifiers; Optical design; Optical refraction; Optical variables control; Propagation constant; Semiconductor lasers; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.571625
Filename
571625
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