• DocumentCode
    2553629
  • Title

    Design and simulation of a high temperature MEMS micro-hotplate for application in trace gas detection

  • Author

    Ahmed, Abdelaziz Yousif ; Dennis, John Ojur ; Saad, Mohamad Naufal Mohamad ; Talah, Waddah Abdelbagi

  • Author_Institution
    Electr.&Electron. Dept., Univ. Teknol. Petronas, Tronoh
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    153
  • Lastpage
    157
  • Abstract
    In this paper, we present the simulation results of a high temperature MEMS micro-hotplate. The electro-thermo-mechanical behaviors of micro- hotplates (MHP) have been simulated using CoventorWare. In the simulation, the effects of various thicknesses of the silicon nitride (Si3N4) membrane layer on the temperature, mechanical deflection and power consumption of the MHP are evaluated. The effect of the addition of a layer of silicon carbide (SiC) on the MHP temperature distribution is also investigated. Results show that as the thickness of the Si3N4 membrane is increased from 0.3 mum to 3 mum, the power consumption of the MHP increases from 7.1 mW to 34.3 mW while the displacement of the membrane remains constant at a value of about 5.8 mum. It is also demonstrated that when the MHP is designed with a silicon carbide (SiC) heat distributing layer above the silicon oxide (SiO2) insulating layer on top of the heater, the uniformity of the temperature on the MHP membrane is considerably improved as compared to a membrane without SiC.
  • Keywords
    membranes; micromechanical devices; silicon compounds; CoventorWare; MEMS; Si3N4-SiC-SiO2; electro-thermo-mechanical behaviors; mechanical deflection; microhotplate; power 7.1 mW to 34.3 mW; power consumption; silicon carbide heat distributing layer; silicon nitride membrane layer; silicon oxide insulating layer; size 0.3 mum to 3 mum; Arm; Biomembranes; Dielectric materials; Energy consumption; Insulation; Mechanical systems; Micromechanical devices; Silicon carbide; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770297
  • Filename
    4770297