DocumentCode
2554116
Title
Progress in CuGaSe2 based thin film solar cells
Author
Klenk, R. ; Mauch, R. ; Schäffler, R. ; Schmid, D. ; Schock, H.W.
Author_Institution
Inst. fuer Phys. Elektronik, Stuttgart Univ., Germany
fYear
1991
fDate
7-11 Oct 1991
Firstpage
1071
Abstract
Incomplete collection of photogenerated carriers is a commonly encountered problem in Cu(In,Ga)Se2-based solar cells at high Ga/In ratios. By using a modified device structure consisting of cyanide-etched CuGaSe2 absorbers and a (Zn,Cd)S and ZnO double-layer window, the authors have obtained higher fill factors, up to 65%, and improved red response. Maximum efficiency was increased to 6.2%. Impacts of window layer preparation on cell performance are discussed. Data obtained by surface analysis of single- and bilayers as well as cyanide-etched CuGaSe2 films are presented. A superstrate configuration is proposed to overcome bilayer problems without etching
Keywords
copper compounds; gallium compounds; semiconductor device testing; semiconductor thin films; solar cells; ternary semiconductors; 6.2 percent; CdS; CuGaSe2; ZnO; ZnS; fill factors; performance; red response; semiconductor device testing; solar cells; superstrate; surface analysis; thin film; window layer; Computational Intelligence Society; Conductivity measurement; Electrons; Photovoltaic cells; Radio frequency; Sputtering; Temperature; Transistors; Zero current switching; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169376
Filename
169376
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