DocumentCode
2554156
Title
A proposed low-offset sense amplifier for SRAM applications
Author
Gundu, Anil Kumar ; Singh, Wazir ; Divi, Sai Manoj
Author_Institution
Dept. of ECE, IIIT-Delhi, Delhi, India
fYear
2015
fDate
19-20 Feb. 2015
Firstpage
964
Lastpage
967
Abstract
Random variations play a critical role in determining SRAM yield, by affecting both the bitcell and the read Sense Amplifiers (SA). A low-offset sense amplifier capable of static random access memory (SRAM) applications has been presented in this work. Simulated results show that the proposed sense amplifier has very low offset of 31.284 mV compared to the conventional sense amplifiers.
Keywords
SRAM chips; amplifiers; SA; SRAM yield applications; bitcell; proposed low-offset read sense amplifier; random variations; static random access memory applications; voltage 31.284 mV; CMOS integrated circuits; Delays; Discharges (electric); Logic gates; Random access memory; Sensors; Transistors; Delay; Offset; SRAM (Static Random Access Memory); Sense Amplifier (SA);
fLanguage
English
Publisher
ieee
Conference_Titel
Signal Processing and Integrated Networks (SPIN), 2015 2nd International Conference on
Conference_Location
Noida
Print_ISBN
978-1-4799-5990-7
Type
conf
DOI
10.1109/SPIN.2015.7095420
Filename
7095420
Link To Document