The dependence of GaN HEMT´s frequency figure of merit on temperature

Author

Darwish, Ali M. ; Huebschman, Benjamin ; Viveiros, Edward ; Hung, H. Alfred

Author_Institution

Army Res. Lab., Adelphi, MD, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

909

Lastpage

912

Abstract

This study presents extensive thermal characterization of GaN/SiC devices from five US sources across temperature (-25degC to +125degC). The changes with temperature for: cutoff frequency (f_t), maximum oscillation frequency (f_max), saturated current (I_dss), transconductance (g_m) are measured, statistics studied, and correlations investigated. Temperature-coefficients are established for f_t, f_max, I_dss, and g_m in GaN technology. The results obtained provide MMIC designers with key information required for meeting temperature specifications.

Keywords

III-V semiconductors; MMIC; gallium compounds; high electron mobility transistors; integrated circuit design; semiconductor device measurement; silicon compounds; wide band gap semiconductors; GaN-SiC; HEMT frequency figure-of-merit; MMIC design; cutoff frequency; maximum oscillation frequency; saturated current; temperature -25 C to 125 C; temperature coefficients; thermal characterization; transconductance; Current measurement; Cutoff frequency; Decision support systems; Frequency measurement; Gallium nitride; HEMTs; Silicon carbide; Temperature dependence; Temperature distribution; Transconductance; Gallium nitride; MMIC; cutoff frequency; maximum oscillation frequency; saturated current; temperature coefficient; transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165845

Filename

5165845