A comparative study between zirconium dioxide and hafnium dioxide dielectric charges

Author

Zoolfakar, A.S. ; Hashim, Habibah

Author_Institution

Fac. of Electr. Eng., Univ. Teknol. MARA

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

445

Lastpage

449

Abstract

In this paper, two types of promising high-k dielectric films is studied which are hafnium dioxide, HfO₂ and zirconium dioxide,ZrO. Capacitance-Voltage measurements were carried out to investigate properties such as oxide charges and interface trap charges that exist in the dielectric films. The investigation has been carried out by experiment and modeling. Annealing experiments in forming gas at 380degC were conducted on both of the MOS capacitors. It was concluded that hafnium dioxide and zirconium dioxide have low oxide and interface charges. The reduction of oxide and interface charges by annealing is possible provided that the time taken for the annealing process is well controlled.

Keywords

MOS capacitors; annealing; electric charge; hafnium compounds; high-k dielectric thin films; interface states; zirconium compounds; HfO₂; MOS capacitors; ZrO₂; annealing; capacitance-voltage measurements; dielectric charges; hafnium dioxide; high-k dielectric films; interface trap charges; temperature 380 degC; zirconium dioxide; Annealing; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Dielectric films; Dielectric measurements; Hafnium oxide; High-K gate dielectrics; MOS capacitors; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770360

Filename

4770360