Wafer level electromigration applied to advanced copper/low-k dielectric process sequence integration

We have shown preliminary results from an exhaustive experimental program on the electromigration performance of advanced copper/low-k dielectric process sequences. Wafer-level electromigration test results have been shown to be consistent with package-level test results reported in the literature. These results bode well for the continuing usefulness of wafer-level electromigration as a tool for rapid evaluation of metal reliability. This is particularly important when the long-lived nature of copper metallization will constrain test resources using package-level techniques