Monte Carlo calculation of nonequilibrium phonon distributions related to Raman scattering experiments in Al/GaN

Phonons distributions generated by electrons in high electric field in zinc-blende GaN crystals are investigated employing novel one-particle Monte Carlo (MC) method. The distribution is completely different from the equilibrium Planck function. Monte Carlo data on the electric field-dependent phonon numbers are compared with data elucidated from experiments on the Raman scattering of light in AlN/GaN structures. The controversy on the light and phonon momentum (and energy) conservation in experiments is discussed and phonon-difference processes are suggested to be active in Raman scattering. The research is targeted to applications in terahertz-range generators and blue photonic devices.