Plasma made antireflective GaAs nanograss

Summary form only given. The fabrication of GaAs nanograss to mimic the moth-eye structure have been demonstrated using a simple, one-step, and mask-less plasma etching based approach. The GaAs nanograss exhibits remarkable broadband antireflection properties, which arise from length variation of nanograss due to the graded refractive index between air and GaAs. Moreover, GaAs nanograss show less sensitivity to transverse electric polarized, and transverse magnetic polarized light over a wide range of angles of incidence compared to the strong variation in bare GaAs substrate. These effects show an enhanced absorption of 98%–100% (λ=240–873 nm) and 98%–72% (λ=873–2400 nm) for nanograssed GaAs with a length ∼200 nm. Our simple, one-step, mask-less, plasma etching method opens up promising approach for the direct implementation of broad omnidirectional antireflective surfaces on solar cells and various optoelectronic devices to improve the device performance.