DocumentCode
2557805
Title
A 136-GHz Dynamic Divider in SiGe Technology
Author
Laskin, Ekaterina ; Rylyakov, Alexander
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON
fYear
2009
fDate
19-21 Jan. 2009
Firstpage
1
Lastpage
4
Abstract
A dynamic divide-by-2 circuit is presented. The frequency divider operates from 74 GHz up to at least 136 GHz, limited by the available input power. A balun is included on chip to convert the single-ended input signal to differential, while maintaining input sensitivity better than 0 dBm over the entire frequency range. The divider core has a low power consumption of 72.6 mW from -3.3 V and is implemented in a 210-GHz-f T SiGe bipolar technology.
Keywords
Ge-Si alloys; baluns; frequency dividers; low-power electronics; semiconductor materials; SiGe; SiGe bipolar technology; balun; divider core; dynamic divider; frequency 210 GHz; frequency 74 GHz to 136 GHz; frequency divider; input sensitivity; low power consumption; voltage -3.3 V; CMOS technology; Circuits; Frequency conversion; Germanium silicon alloys; Impedance matching; Low pass filters; Mixers; Silicon germanium; Testing; Transformer cores;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
978-1-4244-3940-9
Electronic_ISBN
978-1-4244-2831-1
Type
conf
DOI
10.1109/SMIC.2009.4770526
Filename
4770526
Link To Document