Accurate analysis of CMOS inverter driving transmission line based on FDTD

Author

Li, Xiaochun ; Mao, Junfa ; Swaminathan, Madhavan

Author_Institution

Shanghai Jiao Tong Univ., Shanghai, China

fYear

2009

fDate

7-12 June 2009

Firstpage

1573

Lastpage

1576

Abstract

This paper introduces a numerical method for time domain analysis of the inverter driving interconnect in CMOS digital integrated circuits. To include the carriers´ velocity saturation effect of short-channel devices, the alpha-power law model is used for MOS transistor modeling. Moreover, interconnect is modeled as transmission line, which is required in deep submicron technologies. Based on detailed analysis of inverter operation and FDTD analysis of transmission line, the accurate time domain response and 50% delay can be achieved by iterative computation. The error of the proposed method is within 5% and the runtime is only one-sixth compared with SPICE.

Keywords

CMOS digital integrated circuits; finite difference time-domain analysis; invertors; iterative methods; power MOSFET; power transmission lines; CMOS digital integrated circuit; CMOS inverter analysis; FDTD; MOS transistor modeling; alpha-power law model; deep submicron technology; inverter driving interconnect; iterative computation; short-channel devices; transmission line; CMOS digital integrated circuits; CMOS technology; Distributed parameter circuits; Finite difference methods; Integrated circuit interconnections; Inverters; MOSFETs; Semiconductor device modeling; Time domain analysis; Transmission lines; CMOS digital integrated circuits; FDTD methods; delay estimation; inverters; time domain analysis; transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5166011

Filename

5166011