DocumentCode
255851
Title
Packaging for power semiconductors based on the 3D printing technology Selective Laser Melting
Author
Conrad, Marc ; De Doncker, Rik W. ; Schniedenharn, Maximilian ; Diatlov, Andrei
Author_Institution
ISEA, RWTH Aachen Univ., Aachen, Germany
fYear
2014
fDate
26-28 Aug. 2014
Firstpage
1
Lastpage
7
Abstract
In this paper a new packaging technique based on Selective Laser Melting is presented which tries to replace solder or sinter layers, respectively bond wires. Following the intended contact geometry and concept, simulations show the influence of the contact geometry on the thermo-mechanical stress the device is committed to. First investigations on the constraints of the production process are represented. Finally the feasibility of the proposed packaging technique is shown.
Keywords
laser materials processing; lead bonding; power semiconductor devices; thermal management (packaging); thermomechanical treatment; 3D printing technology; bond wires; intended contact geometry; power semiconductor packaging technique; selective laser melting; thermo-mechanical stress; Assembly; Cooling; Geometry; Metallization; Packaging; Silicon; Stress; Cooling; High power discrete device; Packaging; Thermal stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location
Lappeenranta
Type
conf
DOI
10.1109/EPE.2014.6910965
Filename
6910965
Link To Document