DocumentCode
2558736
Title
Single crystal and polycrystalline CuInSe2 by the hybrid sputtering and evaporation method
Author
Yang, L. Chung ; Chou, L.J. ; Agarwal, A. ; Rockett, A.
Author_Institution
Dept. of Mater. Sci. & Eng., Illinois Univ., Urbana, IL, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
1185
Abstract
Polycrystalline and single-crystal CuInSe2 has been grown by the hybrid sputtering and evaporation process. The solar cells were 0.08 cm2. The maximum conversion efficiency recorded was 8.4% with V oc=392 mV, J SC=33.9 mA, and a fill factor of 63.1%. Single-crystal CuInSe2 thin films were deposited on GaAs (001)- and (111)-oriented substrates and exhibited (002) and (112) surface orientations, respectively. The single crystals exhibit evidence for faceting on (112)-type planes with a clear preference for one of the sets of planes over the other. The tendency to form facets depends on both the substrate surface preparation and the film stoichiometry
Keywords
copper compounds; indium compounds; semiconductor thin films; solar cells; sputtered coatings; sputtering; ternary semiconductors; vapour deposited coatings; vapour deposition; 33.9 mA; 392 mV; 8.4 percent; CuInSe2; GaAs; evaporation; faceting; fill factor; semiconductor thin films; solar cells; sputtering; stoichiometry; surface preparation; vapour deposition; Gallium arsenide; IEC; Photovoltaic cells; Rough surfaces; Scanning electron microscopy; Sputtering; Substrates; Surface roughness; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169398
Filename
169398
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