Polarization-insensitive multiple-quantum-well traveling-wave electroabsorption modulators with 18 GHz bandwidth and 1.2 V driving voltage at 1.55 /spl mu/m

Author

Zhang, S.Z. ; Yi-Jen Chiu ; Abraham, P. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1998

fDate

12-14 Oct. 1998

Firstpage

33

Lastpage

36

Abstract

Traveling-wave electroabsorption modulators (TEAM) fabricated with InGaAsP/InGaAsP quantum-wells show a modulation bandwidth of 18 GHz, and driving voltages of 1.20 and 1.28 V for 20 dB extinction ratio for TE and TM modes respectively at 1.55 /spl mu/m.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; microwave photonics; optical communication equipment; optical planar waveguides; quantum well devices; 1.2 V; 1.55 micron; 18 GHz; CPW electrode; InGaAsP-InGaAsP; InGaAsP/InGaAsP quantum-wells; TE modes; TM modes; TW electroabsorption modulators; integrated waveguides; microwave response; photonic links; polarization-insensitive MQW modulators; Bandwidth; Extinction ratio; High speed optical techniques; Optical fiber devices; Optical fiber polarization; Optical saturation; Optical waveguides; Quantum well devices; Tellurium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 1998. MWP '98. International Topical Meeting on

Conference_Location

Princeton, NJ, USA

Print_ISBN

0-7803-4936-9

Type

conf

DOI

10.1109/MWP.1998.745484

Filename

745484