Investigation of 1.2 kV SiC MOSFETs for hard- and soft-switching converters

Author

Awwad, Abdullah Eial ; Birgel, Paul ; Dieckerhoff, Sibylle

Author_Institution

Tech. Univ. of Berlin, Berlin, Germany

fYear

2014

fDate

26-28 Aug. 2014

Firstpage

1

Lastpage

10

Abstract

In this paper, current silicon carbide (SiC) MOSFETs from two different manufacturers are evaluated including static and dynamic characteristics for different gate resistances, different load currents and at various temperatures. These power semiconductors are operated continuously at a high switching frequency of 1MHz comparing a hard- and a soft-switching converter. A calorimetric power loss measurement method is realized in order to achieve a good measurement accuracy, and the results are compared to the electrical measurements.

Keywords

losses; power MOSFET; power measurement; silicon compounds; switching convertors; zero current switching; zero voltage switching; SiC MOSFET; calorimetric power loss measurement method; current silicon carbide MOSFET; dynamic characteristic; electrical measurements; frequency 1 MHz; gate resistance; hard-and-soft-switching converters; high switching frequency; load currents; measurement accuracy; power semiconductors; static characteristic; various temperatures; voltage 1.2 kV; Current measurement; Immune system; Logic gates; MOSFET; Silicon carbide; Switches; Temperature measurement; High frequency power converter; Silicon Carbide (SiC); Soft switching; Thermal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on

Conference_Location

Lappeenranta

Type

conf

DOI

10.1109/EPE.2014.6911009

Filename

6911009