Novel hybrid CMOS and CNFET inverting amplifier design for area, power and performance optimization

There is a pressing need to explore circuit design ideas in new emerging technologies in deep-submicron in order to exploit their full potential during the early stages of their development. Carbon nanotube based technology (CNT) has significant potential to replace silicon technology sometimes in the future. This paper presents an optimal design of hybrid CMOS and carbon nanotube field effect transistor (CNFET) based complementary type inverting amplifier for area-power-performance optimization in terms of operating voltage, number of nanotubes, diameter and pitch of the CNFET along with the qualitative explanation of the obtained results at an operating voltage of 0.9 V using HSPICE simulations. Furthermore, comparison of hybrid technology amplifiers with planar CMOS at the 32 nm technology node showed that the performance of PMOS-NCNFET configuration is better in terms of Gain (62% higher), GBP (fT, 181% higher), slew rate (163% higher) etc. while PCNFET-NMOS outperforms in terms of Gain (59% higher), Bandwidth (332% higher), GBP (395%), Output resistance (328% lower) for typical load capacitance (CL = 1fF) at the cost of higher power consumption.