Charge trapping property of RTN grown oxynitride films on strained-Si

Author

Majhi, B. ; Mahata, C. ; Hota, M.K. ; Mallik, S. ; Das, T. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & ECE, Indian Inst. of Technol. Kharagpur, Kharagpur, India

fYear

2009

fDate

1-2 June 2009

Firstpage

1

Lastpage

4

Abstract

Ultra thin (~6-7 nm) silicon-oxynitride films have been deposited on Strained-Si/Si_0.8Ge_0.2 layers at high temperature of 900degC and 1000degC using rapid thermal nitridation in O₂+N₂ ambient. The border trap (Q_bt) generation using the hysteresis in high-frequency capacitance-voltage (C-V) characteristics under both constant current stressing (CCS) and constant voltage stressing (CVS) has been analyzed. It has been observed that the interface trap charge density (D_it) and hysteresis decrease in 1000degC RTN. It is also observed that the charge trapping behavior and the amount of border trap charge density are found to be low in the case of 1000degC RTN process.

Keywords

elemental semiconductors; interface states; nitridation; rapid thermal processing; semiconductor thin films; silicon; RTN grown oxynitride films; Si; Si-SiGe; border trap generation; charge trapping property; constant current stressing; constant voltage stressing; hysteresis decrease; interface trap charge density; silicon-oxynitride films; size 6 nm to 7 nm; temperature 1000 C; temperature 900 C; thermal nitridation; ultra thin; Bonding; Capacitance-voltage characteristics; Electron traps; Germanium silicon alloys; Rapid thermal processing; Semiconductor films; Silicon germanium; Substrates; Temperature; Voltage; Siliconoxynitride; charge trapping; strained-Si;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Semiconductor Technology, 2009. IEDST '09. 2nd International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-3831-0

Electronic_ISBN

978-1-4244-3832-7

Type

conf

DOI

10.1109/EDST.2009.5166134

Filename

5166134