Novel feedstocks for a-SiC:H films and devices

Author

Li, Y.M. ; Fieselmann, B.F. ; Catalano, A.

Author_Institution

Solarex Corp., Newtown, PA, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1231

Abstract

Several series of a-SiC:H alloys, with bandgaps of 1.8-2.0 eV, have been prepared from both methane and polysilymethane feedstocks, with and without hydrogen dilution by the PECVD method. Improvements in structural, optical, and photo-transport properties have been observed in these a-SiC:H alloys compared to CH₄-based films without hydrogen dilution. Also observed are improvements in the initial performance of p-i-n single junction cells using a-SiC:H i-layer from novel carbon feedstocks, as well as in the stability of these cells under extended illumination

Keywords

amorphous semiconductors; hydrogen; plasma CVD; semiconductor growth; silicon compounds; solar cells; PECVD method; amorphous SiC:H solar cells; bandgaps; extended illumination; methane feedstocks; optical properties; p-i-n single junction cells; photo-transport properties; plasma enhanced chemical vapour deposition; polysilymethane feedstocks; semiconductor; stability; structural properties; Amorphous silicon; Bonding; Crystallization; Hydrogen; Optical distortion; Optical films; Photoconductivity; Photonic band gap; Silicon alloys; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169406

Filename

169406