DocumentCode
2560454
Title
Modeling hot electron in single quantum well p-i-n photodiodes
Author
Fardi, Hamid Z. ; Alaghband, Gita
Author_Institution
Dept. of Electr. Eng., Colorado Univ., Denver, CO
fYear
0
fDate
0-0 0
Firstpage
44
Lastpage
45
Abstract
A detailed formulation of energy balance equation is presented. The AlGaAs/GaAs QW results show that hot carrier effect can influence the I-V characteristics for devices with long relaxation lifetime at high injection level. Comparisons made with the available measured data support the modeling of QW p-i-n AlGaAs/GaAs photodiode structures
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; p-i-n photodiodes; quantum well devices; semiconductor device models; AlGaAs-AlAs; AlGaAs/GaAs QW; energy balance equation; hot carrier effect; hot electron modeling; relaxation lifetime; single quantum well p-i-n photodiode; Charge carrier processes; Electron emission; Gallium arsenide; Lattices; P-i-n diodes; PIN photodiodes; Poisson equations; Predictive models; Temperature; Thermionic emission;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS Summer Topical Meetings, 2006 Digest of the
Conference_Location
Quebec City, Que.
Print_ISBN
1-4244-0090-2
Type
conf
DOI
10.1109/LEOSST.2006.1694060
Filename
1694060
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