Monte Carlo Simulation of As2 Adsorption on GaAs Surface

Author

Nastovjak, Alla G. ; Shwartz, Nataliya L. ; Yanovitskaja, Zoya Sh ; Zverev, Alexey V.

Author_Institution

IEEE Member, Novosibirsk State Technical University, Novosibirsk, Russia. E-mail: alla@spy.isp.nsc.ru

fYear

2006

fDate

38899

Firstpage

58

Lastpage

63

Abstract

Investigation of As2 adsorption on(111) and (001) GaAs srfaces was carried out using Monte Carlo simulation. The program package SilSim3D-7Comp taking into account chemical reactions on the surface in multicomponent systems and reconstruction of (001) surface was developed. Dependences of arsenic coverage on energy parameters of the model system were examined.

Keywords

III-V semiconductors; Monte Carlo methods; adsorption; arsenic; gallium arsenide; surface reconstruction; As₂; Monte Carlo simulation; SilSim3D-7comp; arsenic adsorption; chemical reactions; multicomponent systems; surface reconstruction; Atomic layer deposition; Chemical vapor deposition; Epitaxial growth; Gallium arsenide; Kinetic theory; Lattices; Nanoelectronics; Physics; Semiconductor device packaging; Surface reconstruction; GaAs; Monte-Carlo; adsorption;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on

Conference_Location

Novosibirsk, Russia

ISSN

1815-3712

Print_ISBN

5-7782-0646-1

Type

conf

DOI

10.1109/SIBEDM.2006.230307

Filename

1694073