Radiation Defects in the Light - Emitting Silicon Nanocrystals

The influence of an ion irradiation on the properties of light-emitting silicon NC has been examined in conditions when accelerated ions F passed the studied layer through. For introduction of radiation defects in NC the layers were irradiated with 200 keV F⁺ ions within the dose range of 10¹²-10¹⁴ cm^-2. The samples were characterized by PL, and their structural properties - by HREM and Raman spectroscopy. It is shown, that for PL quenching there is enough to create in NC individual displacements (1-5 displacement/NC). However NC retain crystal structure even at the doses exceeding the doses of PL quenching for about an order (up to 50 displacement/NC). At such doses the electron microscopy reveals in NC a heavily damaged lattice.