• DocumentCode
    2561260
  • Title

    A DC-7 GHz Small-Area Distributed Amplifier Using 5-port Inductors in a 180nm Si CMOS Technology

  • Author

    Ito, Takeshi ; Kawazoe, Daisuke ; Okada, Kenichi ; Masu, Kazuya

  • Author_Institution
    Tokyo Inst. of Technol., Tokyo
  • fYear
    2006
  • fDate
    13-15 Nov. 2006
  • Firstpage
    363
  • Lastpage
    366
  • Abstract
    This paper proposes a novel small-area distributed amplifler (DA), which utilizes two 5-port inductors to replace eight inductors. The DA is fabricated using a standard 180 nm CMOS process with 6 metal layers. The layout area of DA is 0.33 mm2. It is about 50 % as large as conventional DAs, and it has power gain of 6.3 dB and noise figure of 6 dB at DC-7 GHz.
  • Keywords
    CMOS integrated circuits; distributed amplifiers; inductors; silicon; 5-port inductors; DC-7 GHz; Si CMOS technology; frequency 7 GHz; size 180 nm; small-area distributed amplifier; Broadband amplifiers; Broadband antennas; CMOS technology; Circuits; Distributed amplifiers; Energy consumption; Inductors; Noise figure; Radio frequency; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian
  • Conference_Location
    Hangzhou
  • Print_ISBN
    0-7803-9734-7
  • Electronic_ISBN
    0-7803-97375-5
  • Type

    conf

  • DOI
    10.1109/ASSCC.2006.357926
  • Filename
    4197665
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2561260