DocumentCode
2561279
Title
Laser ablated nanostructured zinc sulphide thin films for optoelectronics device applications
Author
Chalana, S.R. ; Vinodkumar, R. ; Detty, A.P. ; Navas, I. ; Sreedevi, K.S. ; Pillai, V. P Mahadevan
Author_Institution
Dept. of Optoelectron., Univ. of Kerala, Thiruvananthapuram, India
fYear
2009
fDate
12-14 Oct. 2009
Firstpage
1
Lastpage
6
Abstract
ZnS thin films are prepared by pulsed laser deposition and the effect of annealing temperature on the structural and optical properties of ZnS films is investigated systematically using techniques like X-ray diffraction (XRD), Atomic force microscopy (AFM), UV-VIS spectroscopy and Photoluminescence spectroscopy (PL). The XRD pattern of the film annealed at 600°C show a less intense XRD peak of hexagonal ZnO. In the photoluminescence spectra, an orange emission is observed for the films with 325 nm excitation.
Keywords
II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; nanostructured materials; nanotechnology; photoluminescence; pulsed laser deposition; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; UV-VIS spectroscopy; X-ray diffraction; XRD; ZnS; annealing; atomic force microscopy; laser ablation; nanostructured thin films; optical properties; orange emission; photoluminescence spectroscopy; pulsed laser deposition; structural properties; temperature 600 degC; wavelength 325 nm; Annealing; Atom optics; Nanoscale devices; Optical films; Optoelectronic devices; Pulsed laser deposition; Thin film devices; X-ray lasers; X-ray scattering; Zinc compounds; nanostructured zinc sulphide thin films; pulsed laser deposition; quantum confinement effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultra Modern Telecommunications & Workshops, 2009. ICUMT '09. International Conference on
Conference_Location
St. Petersburg
Print_ISBN
978-1-4244-3942-3
Electronic_ISBN
978-1-4244-3941-6
Type
conf
DOI
10.1109/ICUMT.2009.5345562
Filename
5345562
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