• DocumentCode
    2561279
  • Title

    Laser ablated nanostructured zinc sulphide thin films for optoelectronics device applications

  • Author

    Chalana, S.R. ; Vinodkumar, R. ; Detty, A.P. ; Navas, I. ; Sreedevi, K.S. ; Pillai, V. P Mahadevan

  • Author_Institution
    Dept. of Optoelectron., Univ. of Kerala, Thiruvananthapuram, India
  • fYear
    2009
  • fDate
    12-14 Oct. 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    ZnS thin films are prepared by pulsed laser deposition and the effect of annealing temperature on the structural and optical properties of ZnS films is investigated systematically using techniques like X-ray diffraction (XRD), Atomic force microscopy (AFM), UV-VIS spectroscopy and Photoluminescence spectroscopy (PL). The XRD pattern of the film annealed at 600°C show a less intense XRD peak of hexagonal ZnO. In the photoluminescence spectra, an orange emission is observed for the films with 325 nm excitation.
  • Keywords
    II-VI semiconductors; X-ray diffraction; annealing; atomic force microscopy; nanostructured materials; nanotechnology; photoluminescence; pulsed laser deposition; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; UV-VIS spectroscopy; X-ray diffraction; XRD; ZnS; annealing; atomic force microscopy; laser ablation; nanostructured thin films; optical properties; orange emission; photoluminescence spectroscopy; pulsed laser deposition; structural properties; temperature 600 degC; wavelength 325 nm; Annealing; Atom optics; Nanoscale devices; Optical films; Optoelectronic devices; Pulsed laser deposition; Thin film devices; X-ray lasers; X-ray scattering; Zinc compounds; nanostructured zinc sulphide thin films; pulsed laser deposition; quantum confinement effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultra Modern Telecommunications & Workshops, 2009. ICUMT '09. International Conference on
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    978-1-4244-3942-3
  • Electronic_ISBN
    978-1-4244-3941-6
  • Type

    conf

  • DOI
    10.1109/ICUMT.2009.5345562
  • Filename
    5345562