• DocumentCode
    2561818
  • Title

    Trends in Development of Modern Silicon Nanoelectronics

  • Author

    Neizvestny, Igor G.

  • Author_Institution
    Inst. of Semicond. Phys., Russian Acad. of Sci.
  • fYear
    2006
  • fDate
    1-5 July 2006
  • Firstpage
    3
  • Lastpage
    5
  • Abstract
    In this tutorial the main trends in development of silicon nanoelectronics are presented and analyzed. All presented technologies are illustrated
  • Keywords
    integrated circuit technology; monolithic integrated circuits; nanoelectronics; semiconductor technology; silicon; Si; germanium technology; silicon nanoelectronics; silicon technology; CMOS technology; Compressive stress; Doping; Germanium silicon alloys; MOSFET circuits; Microelectronics; Nanoelectronics; Silicon germanium; Tensile stress; Transistors; germanium; nanoelectronics; silicon; technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
  • Conference_Location
    Erlagol, Altai
  • ISSN
    1815-3712
  • Print_ISBN
    5-7782-0646-1
  • Type

    conf

  • DOI
    10.1109/SIBEDM.2006.231989
  • Filename
    1694123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2561818