DocumentCode
2561907
Title
The Perspective Structures for Microwave Heterotransistors for Communication Techniques
Author
Mashkantsev, Vitaliy G. ; Kalinin, Sergey V.
Author_Institution
Siberian State Univ. of Telecommun. & Informatics, Novosibirsk
fYear
2006
fDate
1-5 July 2006
Firstpage
24
Lastpage
26
Abstract
This information contains the main elementary base of nanoheterostructural electronics, which combines high electron mobility transistors (HEMT), heterojunction bipolar transistors (HBT) and GaN transistors
Keywords
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; microcomputers; microprocessor chips; microwave transistors; mobile radio; wide band gap semiconductors; GaN; HBT; HEMT; communication techniques; heterojunction bipolar transistors; high electron mobility transistors; microwave heterotransistors; nanoheterostructural electronics; Consumer electronics; Gallium arsenide; Gallium nitride; HEMTs; Heterojunction bipolar transistors; MODFETs; Microwave communication; Microwave devices; Microwave theory and techniques; Microwave transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
5-7782-0646-1
Type
conf
DOI
10.1109/SIBEDM.2006.231995
Filename
1694129
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