Multivariate Modeling of Heterogeneous Geometrical Surfaces in the Technological Cycle of Manufacturing Silicon Matrixes

Author

Perov, Gennadiy V. ; Shauerman, Aleksey A.

Author_Institution

Siberian State Univ. of Telecommun. & Comput. Sci., Novosibirsk

fYear

2006

fDate

1-5 July 2006

Firstpage

30

Lastpage

31

Abstract

A one-dimensional development model of a non-uniform semiconductor surface with adjusted horizontal type of doping is elaborated during thermal oxidation. The model is adapted to structures - polycrystalline silicon (PC) - oxide. Frameworks of the subsequent model expansion in 3D format for the analysis of electric and charging characteristics in heterogeneous structures are proved

Keywords

elemental semiconductors; oxidation; semiconductor doping; silicon; 1D development model; Si; charging characteristics; doping; electric characteristics; heterogeneous geometrical surfaces; multivariate modeling; nonuniform semiconductor surface; polycrystalline silicon; silicon matrixes; thermal oxidation; Doping; Impurities; Microcomputers; Oxidation; Rough surfaces; Semiconductor process modeling; Silicon; Solid modeling; Surface roughness; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2006. Proceedings. 7th Annual 2006 International Workshop and Tutorials on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

5-7782-0646-1

Type

conf

DOI

10.1109/SIBEDM.2006.231997

Filename

1694131