Novel type of ZnO studied in combination with 1.5 eV a-SiGe:H pin diodes

Author

Weller, H.C. ; Mauch, R.H. ; Bauer, G.H.

Author_Institution

Inst. fur Phys. Elektronik, Stuttgart Univ., Germany

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1290

Abstract

Low gap 1.5 eV a-SiGe:H pin diodes with p-a-SiC:H windows (E _g=1.95 eV) have been deposited on conventional SnO_x and novel Al-doped ZnO (ZnO:Al) to compare the influence of these TCOs (transparent conductive oxides) on diode parameters. Characterization by transmission, sheet resistance, and SEM photographs reveals comparable features for both types of TCOs, ZnO:Al additionally shows a very high chemical stability in hydrogen containing plasmas. Transmission and absorption experiments on the layer-system TCO/p-SiC:H (thin) indicate different rates of growth for p-a-SiC:H on ZnO:Al and SnO_x, respectively

Keywords

Ge-Si alloys; II-VI semiconductors; amorphous semiconductors; hydrogen; optical films; p-i-n diodes; semiconductor thin films; solar cells; zinc compounds; SEM photographs; SiC:H windows; SnO_x; absorption; amorphous SiGe:H-ZnO solar cells; chemical stability; pin diodes; sheet resistance; transmission; transparent conductive oxides; Chemicals; Circuit stability; Conductivity; Hydrogen; Photonic band gap; Photovoltaic cells; Plasma stability; Semiconductor diodes; Surface morphology; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169416

Filename

169416