• DocumentCode
    2562097
  • Title

    12% two-stacked a-Si:H tandem cells with a new p-layer structure

  • Author

    Ichikawa, Y. ; Fujikake, S. ; Ohta, H. ; Sasaki, T. ; Sakai, H.

  • Author_Institution
    Fuji Electric Corp. Res. & Dev., Ltd., Kanagawa, Japan
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    1296
  • Abstract
    Hydrogenated amorphous silicon oxide (a-SiO:H) was applied to the p-layer of a p-i-n single-junction a-Si solar cell. The boron-doped a-SiO:H film deposited by conventional glow discharge decomposition has excellent properties as compared with a-SiC:H. Applying this film to the p-layer, a conversion efficiency of 12.5% in a 1 cm2 cell was attained
  • Keywords
    amorphous semiconductors; elemental semiconductors; hydrogen; silicon; solar cells; 12.5 percent; 2-stacked solar cells; amorphous Si:H tandem solar cell; glow discharge decomposition; p-layer structure; semiconductor; Absorption; Amorphous silicon; Conducting materials; Conductivity; Heterojunctions; Optical films; Optical materials; PIN photodiodes; Photovoltaic cells; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169417
  • Filename
    169417
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2562097